METHOD FOR GROWING NITRIDE SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor layer capable of obtaining a nitride semiconductor layer with good p-type characteristics.

SOLUTION: When Be is used as a p-type dopant, the p-type characteristics of a p-GaN layer 23 significantly depend on the dislocation density of the surface of a substrate 5 as compared with the case where Mg is used. Therefore, carrier compensation of Be by dislocation can be suppressed, and a p-GaN layer 23 with good p-type characteristics is obtained, by using a substrate 5 having a dislocation density of 5×108cm-2or less. The growth direction and composition distribution of the p-GaN layer 23 can be controlled with good accuracy by using an MBE technique.

COPYRIGHT: (C)2010,JPO&INPIT