NONVOLATILE MEMORY, METHOD OF READING OUT DATA THEREFROM, AND METHOD OF WRITING DATA THEREIN

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory array which can implement high cell density and higher operation speed caused by lower bit line resistance, and is hardly influenced by disturbance to a stored content at reading and writing.

SOLUTION: A plurality of memory cells are two-dimensionally disposed in two different directions together with connection regions 411, conductive bit lines 4010 extending in a first direction, conductive word lines 6030 extending in a second direction, and conductive control lines 6010 and 6020. The connection regions 411 are formed throughout the memory array comprising four cells which are connected to one bit line. The connection regions 411 are formed in the same processing step as for opposite conductivity-type regions 401 for the economy of processing.

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