发明名称 SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a substrate processing method and a mask manufacturing method which are capable of high precision pattern forming. <P>SOLUTION: The substrate processing method has a discharging opening and a suction opening of a processing liquid, the discharging opening and the suction opening of a nozzle provided so as to be capable of relative movement to the substrate of processing object are made to face the processed plane of the substrate, while supplying the processing liquid from the discharging opening to the processed plane, the processing liquid supplied to this processed plane is suctioned to the suction opening, thereby only a part of the region of the processed plane is selectively processed by the processing liquid. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009295840(A) 申请公布日期 2009.12.17
申请号 JP20080148940 申请日期 2008.06.06
申请人 TOSHIBA CORP 发明人 SAKURAI HIDEAKI;OTOHATA YUKIO;ITO MASAMITSU
分类号 H01L21/027;G03F1/44;G03F1/82;H01L21/304 主分类号 H01L21/027
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