| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for suppressing deterioration of a read margin in a semiconductor memory. SOLUTION: This semiconductor memory is equipped with: a main bit line BL1; a first sub-bit line bBL1 forming one set of a bit line pair with the main bit line BL1; a first resistive storage element MTJ1 one end of which is connected to the main bit line BL1; a first selection transistor Tr1 wherein the gate is connected to a first word line WL1, one end of the current path is connected to the other end of the first resistive storage element MTJ1, and the other end of the current path is connected to the first sub-bit line bBL1; a second sub-bit line bBL2 forming one set of bit line pair with the first main bit line BL1; a second MTJ element MTJ2 one end of which is connected to the first main bit line; and a second selection transistor Tr2 wherein the gate is connected to a second word line WL2, one end of the current path is connected to the other end of the second resistive storage element MTJ2, and the other end of the current path is connected to the second sub-bit line bBL2. COPYRIGHT: (C)2010,JPO&INPIT |
