| 摘要 |
Memory devices, bulk storage devices, and methods of operating memory are disclosed, such as those adapted to process and generate analog data signals representative of data values of two or more bits of information. Programming of such memory devices can include programming to a target threshold voltage within a range representative of the desired bit pattern. Reading such memory devices can include generating an analog data signal indicative of a threshold voltage of a target memory cell. The target memory cell can be sensed against a reference cell includes a dummy string of memory cells connected to a target string of memory cells, and, such as by using a differential amplifier to sense a difference between a reference cell and the target cell. This may allow a wider range of voltages to be used for data states.
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