| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device enhancing the reliability of connection of a penetration electrode in the semiconductor device and preventing a failure of electrical characteristics because of residues from a pad during the formation of the penetration electrode. <P>SOLUTION: In this semiconductor device, the contacted area of a pad 21-1 with a conductor layer 27 becomes the same as the aperture diameterϕ2 of an opening part 26 provided on a silicon substrate 20, so that the contacted area becomes larger than that in the related-art and thus, and the reliability of connection can be enhanced. Moreover, in the production process of the semiconductor device, residues containing a metal (pad 21-1) are attached to the outside of an insulating film 25 and the residues are not contacted with a silicon substrate body 20c, so that it can be prevented that a failure of electrical characteristics by a diffusion of a heavy metal such as Cu in the residues into the inside of the silicon substrate body 20c is caused. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
