| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain a semiconductor device in which breaking defects of a gate insulating film and digging defects of a substrate are hardly caused when two kinds of transistors different in the structure of a gate electrode are formed. Ž<P>SOLUTION: The semiconductor device is provided with: a semiconductor substrate 11; a first transistor 20 formed in a first region 13 of the semiconductor substrate 11; and a second transistor 30 formed in a second region 14 of the semiconductor substrate 11. The first transistor 20 has: a first gate insulating film 21; and a first gate electrode 22, and the second transistor 30 has: a second gate insulating film 31; and a second gate electrode 32. The first gate insulating film 21 and the second gate insulating film 22 include a first insulating film 41 and a second insulating film 42. At least a part of elements contained in the first gate electrode 22 and a part of elements contained in the second gate electrode 32 are mutually different. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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