发明名称 METHODS FOR CHARACTERIZING DEVICE VARIATION IN ELECTRONIC MEMORY CIRCUITS
摘要 A circuit includes a comparator circuit configured such that its output toggles from a first digital logical level to a second digital logical level when its first and second inputs transition between a first state wherein the first input has an applied voltage greater than an applied voltage at the second input and a second state wherein the first input has an applied voltage less than an applied voltage at the second input. A plurality of cells each have at least one series-connected pair of field effect transistors interconnected at an output node intermediate the field effect transistors. Decoding logic is configured to select a given one of the cells for measurement, and selectively interconnect the output node of the given one of the cells to the first input of the comparator circuit. Voltage supply circuitry is configured to (i) apply voltages to the gates of the pair of transistors of the given one of the cells selected for measurement, such that the pair of transistors operate in a linear region, and have a variable voltage difference, Delta, between their gate-to-source voltages, and (ii) vary the Delta until the comparator circuit output toggles from the first digital logical level to the second digital logical level.
申请公布号 US2009310430(A1) 申请公布日期 2009.12.17
申请号 US20090542187 申请日期 2009.08.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHUANG CHING-TE K.;KIM JAE-JOON;MUKHOPADHYAY SAIBAL
分类号 G11C29/00;G01R19/00;G01R31/08;G11C11/00 主分类号 G11C29/00
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