发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENT
摘要 <p>PURPOSE:To obtain a flip chip efficiently dissipating heat by simple structure and method by forming a radiating electrode consisting of a good thermal conductor and a large are an a surface section except a protruding electrode on the surface of an IC chip. CONSTITUTION:Protruding electrodes 19 for connecting an external circuit, which penetrates an insulating layer 24, one end thereof is connected to an internal circuit 21 and the other end thereof is shaped to an external surface, and is exposed to the outside, and a radiating pole 26 composed of a good thermal conductor arranged onto the insulating layer 24 and having a surface area larger than the protruding electrodes 19 are formed. With said protruding electrodes 19 and radiator pole 26, copper is evaporated onto pads 20 such as aluminum pads 20 or a layer such as a glass layer 23 for protection, copper is attached thickly through electroplating, solder cream is printed and placed, and solder cream is heated at the melting point or higher of the solder and solder is melted, thus shaping the bumps 19 and 26 in the same height. An electrode 17 having a pattern oppositely faced to the bumps 19, 26 is shaped onto the surface of a substrate 16, solder cream is applied thinly onto the electrode 17, said IC chip 18 is placed, solder is melted through heating and the IC chip is connected thereto.</p>
申请公布号 JPS62144346(A) 申请公布日期 1987.06.27
申请号 JP19850286084 申请日期 1985.12.19
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIGASHIYAMA KENJI
分类号 H01L21/60;H01L23/34;H01L23/367 主分类号 H01L21/60
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