| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element where a driving voltage is reduced by obtaining good ohmic contact between a nitride semiconductor layer and an electrode, and to provide a method of manufacturing the same. SOLUTION: In the method of manufacturing the nitride semiconductor light-emitting element, a material to be subjected to removal processing, where a nitride semiconductor laminated part comprising a nitride semiconductor is formed on a top surface of a substrate, is immersed in a removing liquid and then is exposed to a cleaning liquid. The time of a step of exposure to the cleaning liquid is shortened to reduce the proportion of oxygen atoms on a top surface of the nitride semiconductor laminated part, whereby good ohmic contact between the top surface of the nitride semiconductor laminated part and the electrode formed on the top surface is obtained. COPYRIGHT: (C)2010,JPO&INPIT
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