发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To correctly evaluate on-chip variation in characteristics of a MOSFET incorporated in an LSI. Ž<P>SOLUTION: In a method of evaluating on-chip variations in characteristics of a MOSFET, in an LSI that incorporates a logic circuit using the MOSFET and a substrate bias control circuit for applying a substrate bias to the MOSFET; the median value and the mean value of the off-current of the MOSFET are monitored; and the ratio between the mean value and the median value is obtained to evaluate on-chip variation inside characteristics of the MOSFET. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009295818(A) 申请公布日期 2009.12.17
申请号 JP20080148433 申请日期 2008.06.05
申请人 TOSHIBA CORP 发明人 INUKAI TAKASHI
分类号 H01L21/822;H01L21/66;H01L27/04 主分类号 H01L21/822
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