| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which has a structure allowing the reduction in a parasitic capacitance between two conductors or between a conductor and a substrate as well as the maintenance of mechanical strength, and to provide a method of manufacturing the same. SOLUTION: The semiconductor apparatus 1 includes: a semiconductor substrate 2; first and second layer metallic wirings 11, 16 which are formed on the semiconductor substrate 2; and first and second interlayer insulation films 12, 14 which are formed between the first and second layer metallic wirings 11, 16. The first and second layer metallic wirings 11, 16 sandwich the first and second interlayer insulation films 12, 14, and the portions of the first and second interlayer insulation films 12, 14, which are sandwiched by the first and second metallic wirings 11, 16, include air gaps 13. COPYRIGHT: (C)2010,JPO&INPIT
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