| 摘要 |
Method for making a transistor with self-aligned gate and ground plane, comprising the steps of: a) forming a stack, on one face of a semi-conductor substrate, comprising an organometallic layer and a dielectric layer, b) exposing a part of the organometallic layer, a portion of the organometallic layer different to the exposed part being protected from the electron beams by a mask, the shape and the dimensions of a section, in a plane parallel to the face of the substrate, of the gate of the transistor being substantially equal to the shape and to the dimensions of a section of said organometallic portion in said plane, c) removing the exposed part, d) forming dielectric portions in empty spaces formed by the removal of said exposed part of the organometallic layer, around said organometallic portion.
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