| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a shoulder, by which the occurrence of dislocation is suppressed in a step of forming the shoulder and yield and productivity can be increased when growing a silicon single crystal by CZ method. Ž<P>SOLUTION: During growing the silicon single crystal having a diameter of 450 mm by CZ method, the height h (height in a shoulder part 11) from a neck part 9 to a body part 12 is controlled to 100 mm or more. By employing the method of forming the shoulder under the condition of applying a transverse magnetic field at predetermined intensity, the occurrence of dislocation in the step of forming the shoulder can be suppressed and a silicon single crystal having no defect can be grown with high production efficiency. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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