METHOD AND SYSTEM FOR APPLYING ION-SELECTIVE MEMBRANE ON ISFET SURFACE
摘要
<p>The present invention provides a method and system for applying ion- selective membrane on Ion-Sensitive Field Effect Transistor (ISFET) surface without involving a mask step. In one embodiment multi-purpose ISFET devices are first prepared at wafer level using a standard Complementary Metal Oxide Semiconductor (CMOS) fabrication process up to Metal (1) bond pad and ISFET gate window is open for ion sensing purposes. A retaining structure is applied (105) as a protective layer and to define the gate window opening prior to membrane cocktail application (107) by manually pipetting out through a pipette.</p>
申请公布号
WO2009151309(A1)
申请公布日期
2009.12.17
申请号
WO2008MY00172
申请日期
2008.12.03
申请人
MIMOS BERHAD;RASHID, NORA ' ZAH ABDUL;AZIZ, AIMAN SAJIDAH ABD;AHMAD, MOHD RAIS;RANI, ROZINA ABDUL
发明人
RASHID, NORA ' ZAH ABDUL;AZIZ, AIMAN SAJIDAH ABD;AHMAD, MOHD RAIS;RANI, ROZINA ABDUL