| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in a breakdown voltage to a dielectric breakdown of an insulating film formed on a semiconductor layer without increasing the thickness of the insulating film, and a method of manufacturing the same. Ž<P>SOLUTION: A LOCOS oxide film 8 is formed on the surface of an epitaxial layer 5. Further, a first insulator 13 which is thicker than the LOCOS oxide film 8 is buried in the epitaxial layer 5. Then a resistance element 3 is formed on the first insulator 13. Consequently, the first insulator 13 is interposed between the resistance element 3 and epitaxial layer 5. A voltage applied between the epitaxial layer 5 and resistance element 3 is dispersed to the first insulator 13, so an application voltage applied to the LOCOS oxide film 8 due to application of a voltage to the resistance element 3 can be reduced. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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