THIN FILM TRANSISTOR SUBSTRATE AND MANUFSCTURING METHOD THEREOF
摘要
PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to form a storage capacitor electrode by a transparent conductive layer, thereby preventing lowering of the aperture ratio. CONSTITUTION: A thin film transistor(T) comprises a semiconductor layer, a gate electrode, a source electrode and a drain electrode. A pixel electrode(190) is connected to the thin film transistor. A storage electrode(166) is connected to a common line. The storage electrode is formed by a transparent conductive layer. The storage electrode forms the pixel electrode and a storage capacitor.
申请公布号
KR20090129824(A)
申请公布日期
2009.12.17
申请号
KR20080055926
申请日期
2008.06.13
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, DAE CHEOL;KIM, WOONG KWON;HAN, SANG YOUN;KIM, IN WOO;LEE, HO JUN