发明名称 THIN FILM TRANSISTOR SUBSTRATE AND MANUFSCTURING METHOD THEREOF
摘要 PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to form a storage capacitor electrode by a transparent conductive layer, thereby preventing lowering of the aperture ratio. CONSTITUTION: A thin film transistor(T) comprises a semiconductor layer, a gate electrode, a source electrode and a drain electrode. A pixel electrode(190) is connected to the thin film transistor. A storage electrode(166) is connected to a common line. The storage electrode is formed by a transparent conductive layer. The storage electrode forms the pixel electrode and a storage capacitor.
申请公布号 KR20090129824(A) 申请公布日期 2009.12.17
申请号 KR20080055926 申请日期 2008.06.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DAE CHEOL;KIM, WOONG KWON;HAN, SANG YOUN;KIM, IN WOO;LEE, HO JUN
分类号 G02F1/136 主分类号 G02F1/136
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