GAS RING, APPARATUS FOR PROCESSING SEMICONDUCTOR SUBSTRATE, AND METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A gas ring, an apparatus for processing a semiconductor substrate, and a method of processing the semiconductor substrate are provided to form the amount of gas and liquid injected from each gas nozzle by keeping a distance between each nozzle and each branch point constant. CONSTITUTION: In a device, a gas ring(11) has a hook shape. Gas induction holes(12a,12b) introduce the gas from the outside to inside the gas ring. A plurality of gas outlets(18a-18h) inject the gas introduced from a gas induction hole. A plurality of branch lines are expanded along a hook shape to the gas outlet from the gas inlet. The distance from the gas inlets to a branch points are same. The gas ring has a round hook shape. A plurality of gas inlets are formed to be equimultiple. A resistance member of flow passage is same from each gas outlet to the branch point.