| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a photovoltaic power device having a structure to indicate the excellent passivation effect without reducing the quality of a silicon substrate, in the photovoltaic power device which is manufactured not only from a monocrystal substrate but also from a polycrystal substrate. <P>SOLUTION: The photovoltaic power device includes: a P-type silicon substrate 101; an N-type diffusion layer 102 formed on a light incident side surface of the silicon substrate 101; a grid electrode 103 formed on the N-type diffusion layer 102; a passivation film 104 formed on the surface of the silicon substrate 101 opposite to the light incident side; a cap film 105 formed on the passivation film 104 and having a more precise structure than that of the passivation film 104; a back-surface field layer 106 which fills a plurality of openings 130 formed on a laminate of the passivation film 104 and the cap film 105, is formed on the cap film 105 and is comprised of a silicon film containing a P-type impurity of higher concentration than that of the silicon substrate 101; and a back-surface electrode 121 formed on an upper surface of the back-surface field layer 106. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
