| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor device which forms the desired etching shape to impress the optimal stress to a device. Ž<P>SOLUTION: In the method for manufacturing the semiconductor device, a semiconductor substrate 1, on the top surface of which a gate insulating film 2, a gate electrode 3, and a sidewall 5 are formed is first prepared. Next, anisotropic etching is performed to the semiconductor substrate 1 using the gate electrode 3 and the sidewall 5 as a mask to form a first groove 9. Next, isotropic etching is performed to a region in which the first groove 9 is formed of the semiconductor substrate 1 using the gate electrode 3 and the sidewall 5 as the mask to form a second groove 10. After that, a semiconductor material with a lattice constant different from that of the semiconductor substrate 1 is embedded in the second groove 10 to form a source-drain region 6a. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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