| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a device characteristics. Ž<P>SOLUTION: The semiconductor laser element includes a dielectric material of a large refractive index difference with a substrate material arranged in a periphery of an emission end surface, a dielectric body having a refractive index as high as the substrate material arranged except for in the periphery of the emission end surface. Thereby, a wide horizontal diverging angle, that is an FFP of a low aspect ratio, can be achieved, and a high kink level can also be achieved. Furthermore, an end surface breakdown level can be improved by arranging a dielectric material on an upper surface of a ridge waveguide 112 in the periphery of the emission end surface. In addition, an FFP shape with reduced local distortion can be achieved by providing an electrode on the upper surface of the ridge waveguide 112 in the periphery of the emission end surface. Thereby, the device characteristics can be improved. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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