| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for pulling a silicon single crystal by a CZ method where the acquisition rate and its assurance of a fault-free crystal (perfect crystal) can be enhanced. SOLUTION: In the apparatus for pulling a single crystal to pull the silicon single crystal from a molten liquid, a method for enhancing the repeatability of crystal fault distribution in the surface of a silicon wafer cut from the silicon single crystal by tracing the variation amount of GAP being a distance from the bottom of a thermal shield to the surface of the molten liquid and minimizing the variation amount when the pulling of the silicon single crystal is performed in the apparatus equipped with the thermal shield surrounding the periphery of the silicon single crystal is used. As an example, a fault-free crystal region is formed over a wide region of a produced silicon ingot by the precise feedback control of the distance L of GAP basing on a measured value by a melt level detector and also the precise control of a crystal pulling velocity V. COPYRIGHT: (C)2010,JPO&INPIT
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