SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCTION THEREOF

摘要

Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of face [110] in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon monocrystal substrate having face [110] as the main face, wherein the off-angle of face [110] is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured on SP2 at a DWO mode).