| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of reducing light extraction loss because of wiring arrangement for driving an element, resulting in the miniaturization of a package by the reduction of the area or the element. <P>SOLUTION: The semiconductor light emitting element has a structure in which a sapphire substrate 4, a buffer layer, an N-type nitride semiconductor layer 3 made of AlGaN doped with an N-type dopant, an active layer 2 made of non-doped InGaN and a P-type nitride semiconductor layer 1 made of AlGaN doped with a P-type dopant are laminated in this order, and an inclined surface is formed on the sapphire substrate 4 and light is extracted from the side surface of a crystal growth substrate by a reflection film 8b formed on the inclined surface. <P>COPYRIGHT: (C)2010,JPO&INPIT |
