| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform patterning with high resolution while protecting an outer circumferential part of a semiconductor wafer with a resist film. <P>SOLUTION: A method of manufacturing a semiconductor device includes processes (S220 to S226) of forming a negative resist film having an annular pattern masking the outer circumferential part of the semiconductor wafer on a film to be processed which is formed on the semiconductor wafer, processes (S228 to S234) of forming a positive resist film having a predetermined pattern on the negative resist film, and a process of etching the film to be processed using the negative resist film and the positive resist film as a mask. <P>COPYRIGHT: (C)2010,JPO&INPIT |
