| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of stably polishing the cut surface of a semiconductor seed crystal as one face remains substantially unprocessed. <P>SOLUTION: The method includes a step of forming an adhesive layer 3m and a supporting portion 5 on the side of a growth face 11a of an ingot end 11 having one face as the cut surface 11b and the other face as an unprocessed growth face 11a in the state that the cut surface 11b is exposed, and of forming a face 5A substantially parallel to the cut surface 11a on the supporting portion 5, a step of polishing the cut surface 11a, and a step of separating the supporting portion 5. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
