| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which allows transistor characteristics to be used stably for a long period of time. SOLUTION: The manufacturing method of the semiconductor device includes a step of forming a gate insulating film 2 on a semiconductor substrate 1, a step of forming an amorphous silicon film 3 on the gate insulating film 2, a step of implanting impurity ions 4 into the amorphous silicon film 3, and a step of forming a gate electrode 3a on the gate insulating film 2 by processing the amorphous silicon film 3. COPYRIGHT: (C)2010,JPO&INPIT |
