| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a semiconductor laser capable of satisfying all of an effective temperature characteristic, a high polarization ratio, disturbance-free FFP, and a high kink light output in the characteristics of the semiconductor laser. Ž<P>SOLUTION: The semiconductor laser device includes an n-type cladding layer, an active layer, and a p-type cladding layer having a stripe-like ridge and wing regions between which a first groove existing on one side of the ridge and a second groove existing on the other side of the ridge are formed. When the reflectance of a rear end face of a resonator end face is denoted as Rr, the minimum values of widths of the first and second grooves in an area near to the front end face are denoted as W1 and W2, respectively, and the widths of the first and second grooves in the rear end face are denoted as W3 and W4, respectively, relational expressions of Rf<Rr, W1<W3, and W2<W4 are established. When the width of the ridge on the front end face is denoted as Wf and the width of the ridge on the rear end face is denoted as Wr, a relational expression of Wf>Wr is established, and the ridge includes a region whose width is gradually reduced from the front end face side to the rear end face side. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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