| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer which has higher rigidity and is less easily bent than a conventional silicon wafer. SOLUTION: Boron was added to melted silicon at the time of pulling up a silicon single crystal. The pulling-up conditions are set so that a region 11 for precipitating a compound with boron is formed in silicon at a dissolved oxygen concentration of 2×10<SP>18</SP>atoms/cm<SP>3</SP>or more. This provides a silicon wafer 10 containing a region 11 for precipitating a compound of boron and silicon at a high dissolved oxygen concentration. The resulting silicon wafer has higher rigidity than a conventional silicon wafer and is less easily bent than a conventional wafer when the wafer is subjected to simple support horizontally. COPYRIGHT: (C)2010,JPO&INPIT
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