| 摘要 |
An object of the present invention is to provide a method for manufacturing a CMOS image sensor, capable of preventing hillock defects caused by a wire lifting phenomenon in a CMOS image sensor. To this end, the present invention provides a method for manufacturing a CMOS image sensor, including the steps of: preparing a substrate on which a first metal wire is formed; forming an interlayer insulating layer on the first metal wire; etching the interlayer insulating layer to form a contact hole for exposing a part of the first metal wire; forming a buffer layer on the interlayer insulating layer along an inner surface of the contact hole; performing a heat treatment process; etching the buffer layer to form a spacer on an inner wall of the contact hole; forming a barrier metal layer along an upper surface of the interlayer insulating layer including the spacer; forming a contact plug on the barrier metal layer such that the contact hole is buried; and forming a second metal wire on the interlayer insulating layer such that the second metal wire is connected to the contact plug. |
