| 摘要 |
A sintered-oxide target for sputtering which comprises indium (In), gallium (Ga), zinc (Zn), oxygen (O), and incidental impurities. The target is characterized in that the proportions of the elements satisfy the formula InxGayZnzOa {wherein 0.2=x/(x+y)=0.8, 0.1=z/(x+y+z)=0.5, and a=(3/2)x+(3/2)y+z} and that the number of spinal-phase ZnGa2O4 particles having an average particle diameter of 3 µm or larger and present in a 90 µm by 90 µm area in the sintered-oxide target is 10 or smaller. The sintered-oxide target for sputtering, which comprises In, Ga, Zn, O, and incidental impurities, has the improved structure. The formation of a phase causative of nodule generation has been minimized. This IGZO target has a lowered bulk resistivity and a high density, can be inhibited from causing abnormal discharge, and is usable in DC sputtering. |
