NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR

摘要

Provided is a nano-wire field effect transistor which is characterized in that two triangular columnar members made of a silicon crystal to constitute a nano-wire over an SOI substrate having a (100) plane azimuth are arranged vertically such that the edge lines thereof face each other through an insulator.  Also provided is a nano-wire field effect transistor manufacturing method comprising a step of preparing an SOI substrate having a (100) plane azimuth, a step of working a silicon crystal forming an SOI layer, into a raised plate-shaped member having a rectangular section, and a step of working the silicon crystal by a crystal anisotropy etching into the shape, in which two triangular columnar members are so vertically arranged as to face each other through the edge lines, thereby providing the nano-wire.  Further provided is an integrated circuit including the nano-wire field effect transistor.