发明名称 WAFER EXPOSURE METHOD, AND EUV EXPOSURE APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To obtain a wafer exposure method and an EUV exposure apparatus which are capable of easily improving the throughput of wafer exposure. <P>SOLUTION: The wafer exposure method includes: an EUV exposure step of subjecting a product region which becomes a product chip, on a wafer 5 to EUV exposure by an EUV exposure processing part 1; and an EB exposure step of subjecting a peripheral region on the wafer 5 to EB exposure by an EB exposure part 20C. While one wafer 5 is subjected to EUV exposure by the EUV exposure processing part 1, another wafer 5 different from the wafer 5 subjected to EUV exposure is subjected to EB exposure by the EB exposure part 20C. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009295816(A) 申请公布日期 2009.12.17
申请号 JP20080148346 申请日期 2008.06.05
申请人 TOSHIBA CORP 发明人 INENAMI RYOICHI;TOKI TATSUHIKO
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
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