| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents characteristics, such as impurity concentration of a channel layer and impurity concentration, from varying, when forming a semiconductor layer of a conductive type which is opposite to that of the channel layer as a junction FET, and has a junction field effect transistor that can be manufactured easily. <P>SOLUTION: A pair of p<SP>+</SP>-type contact layers 4 is provided on the channel layer 3 at both the sides of a p-type channel region 3a, and an n<SP>+</SP>-type contact layer 4 is provided at a lower side of the channel layer 3. Then, a source-drain electrode 5 is provided to the pair of p<SP>+</SP>-type contact layers 4 in ohmic contact, and a gate electrode 6 is provided on the exposure surface of an n<SP>+</SP>-type contact layer 2, provided on the lower side of the channel layer 3 in ohmic contact, thus forming the junction FET. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
