发明名称 |
SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS |
摘要 |
A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a different width than another fin. At least one gate is provided to control current flow through such fins. Fin spacing may be varied in addition to, or alternative to utilizing different fin widths.
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申请公布号 |
US2009309162(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
US20090484682 |
申请日期 |
2009.06.15 |
申请人 |
INFINEON TECHNOLOGIES AG. |
发明人 |
BAUMGARTNER PETER;SIPRAK DOMAGOJ |
分类号 |
H01L25/065;H01L21/335;H01L29/772 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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