发明名称 SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS
摘要 A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a different width than another fin. At least one gate is provided to control current flow through such fins. Fin spacing may be varied in addition to, or alternative to utilizing different fin widths.
申请公布号 US2009309162(A1) 申请公布日期 2009.12.17
申请号 US20090484682 申请日期 2009.06.15
申请人 INFINEON TECHNOLOGIES AG. 发明人 BAUMGARTNER PETER;SIPRAK DOMAGOJ
分类号 H01L25/065;H01L21/335;H01L29/772 主分类号 H01L25/065
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