发明名称 |
Body to be plated, method of determining plated film thickness, and method of manufacturing semiconductor device |
摘要 |
A structure to be plated includes a body to be plated 11 on which plating is formed, and plated film thickness determining member 16 opposed to and electrically isolated from the body to be plated 11 through a slit portion 12. The plated film thickness determining member 16 has an islands-shape and is conductive. It is possible to instantly determine whether or not the plating formed on the body to be plated 11 has been formed to a thickness larger than the width W of the slit portion 12 on the spot by determining whether or not plating has grown from the surface of the body to be plated 11 to the plated film thickness determining member 16 through the slit portion 21.
|
申请公布号 |
US2009309200(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
US20090457571 |
申请日期 |
2009.06.16 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KANEDA YOSHIHARU |
分类号 |
H01L23/495;G01B11/06;H01L21/66 |
主分类号 |
H01L23/495 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|