| 摘要 |
<p>The present invention relates to a transistor, and more particularly, to a vacuum channel transistor. The vacuum channel transistor according to the present invention comprises a semiconductor substrate; a cathode layer disposed on the semiconductor substrate; an anode layer disposed above the cathode layer to be spaced apart from the cathode layer; and a gate layer disposed between the cathode layer and the anode layer to be spaced apart from the cathode layer and the anode layer. In the vacuum channel transistor, the cathode layer comprises a heating resistor, and the gate layer comprises an electron passing region so that electrons emitted from the cathode layer are transferred to the anode layer.</p> |
