SEMICONDUCTOR DEVICE

摘要

The semiconductor device is equipped with a semiconductor substrate (11), a first transistor (20) that is formed in a first region (13) of the semiconductor substrate (11), and a second transistor (30) that is formed in a second region (14). The first transistor (20) has a first gate insulating film (21) and a first gate electrode (22), and the second transistor (30) has a second gate insulating film (31) and a second gate electrode (32). The first gate insulating film (21) and the second gate insulating film (22) [sic; (31)] comprise a first insulating film (41) and a second insulating film (42). At least a part of the elements contained in the first gate electrode (22) and the elements contained in the second gate electrode (32) are different.