发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can perform oil immersion exposure in such a state as the quality of a resist film at the edge is identical to that at other part and can remove the edge of a resist film effectively, and to provide a substrate processing apparatus. <P>SOLUTION: The method for manufacturing a semiconductor device includes: forming a resist film on a film to be processed; baking the resist film; performing immersion exposure on the resist film; performing post exposure bake on the resist film; developing the resist film; and removing an edge of the resist film after the post exposure bake. The substrate processing apparatus includes: a peripheral exposure device for exposing the edge of the resist film formed on a film to be processed; and equipment for heating the edge of the resist film simultaneously with peripheral exposure, or after peripheral exposure and before development. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009295716(A) 申请公布日期 2009.12.17
申请号 JP20080146591 申请日期 2008.06.04
申请人 TOSHIBA CORP 发明人 KOBAYASHI KATSUTOSHI
分类号 H01L21/027;G03F7/40 主分类号 H01L21/027
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