| 摘要 |
<P>PROBLEM TO BE SOLVED: To uniformly and efficiently heat a wafer. <P>SOLUTION: In a single-wafer type plasma treatment device 10 equipped with a dielectric dome 13 forming a treatment chamber 12 along with a housing 11; a high-frequency power source 15 supplying high-frequency power to a coil 14 through a matching unit 16; an exhaust tube 20 for exhausting the inside of the treatment chamber 12; a gas introduction tube 22 for introducing gas into the treatment chamber 12; and a susceptor 23 holding a wafer 1 in the treatment chamber 12, a microwave absorption plate 24 is mounted on the susceptor 23, a cavity 26 for introducing microwaves therein is formed under the susceptor 23; and a partition plate 27 having a microwave introduction opening 37 is vertically-movably arranged on the bottom of the cavity 26. A microwave power source 31 is installed on a support base 30 horizontally fixed to the shaft 29 of an elevator 28 installed below the partition plate 27, and the microwave power source 31 is connected to the microwave introduction opening 37 through a plurality of waveguides, an isolator 33 and a matching unit 35. <P>COPYRIGHT: (C)2010,JPO&INPIT |
