| 发明名称 |
STRAINED-SILICON-ON-INSULATOR SINGLE-AND DOUBLE-GATE MOSFET AND METHOD FOR FORMING THE SAME |
| 摘要 |
A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.
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| 申请公布号 |
US2009309160(A1) |
申请公布日期 |
2009.12.17 |
| 申请号 |
US20090544431 |
申请日期 |
2009.08.20 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN GUY MOSHE;MOONEY PATRICIA MAY |
| 分类号 |
H01L27/12;G06F17/50;H01L21/762;H01L21/8238;H01L21/84 |
主分类号 |
H01L27/12 |
| 代理机构 |
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