| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric transfer element, capable of suppressing recombination of an electron and a hole and superior in photoelectric transfer efficiency by reducing a probability of reverse migration of electrons injected from a colorant layer to an electron transport layer, a manufacturing method of the photoelectric transfer element, capable of manufacturing such photoelectric transfer element efficiently, and an electronic apparatus having high reliability having the photoelectric transfer element. <P>SOLUTION: The photoelectric transfer element 1 comprises an electrode 3, an electron transport layer 4, a colorant layer D, an electrolyte layer 5, an electrode 6, and a jointing film 7, which joints the electrode 3 and the electron transporting layer 4. The jointing film 7 includes a metal atom, an oxygen atom to bond with the metal atom, and a desorption group, to bond with at least one of the metal atom and oxygen atom and joints the first electrode 3 and the electron transport layer 4 by adhesion demonstrated, by the desorption of the desorption group of the jointing film 7 by applying energy. Furthermore, the jointing film 7 has semiconductor characteristics and the height of the lower end of its conduction belt is lower than the lower end of the conduction belt of the electron transport layer 4. <P>COPYRIGHT: (C)2010,JPO&INPIT |
