| 发明名称 |
SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE FOR MULTI-COLORED DEVICES |
| 摘要 |
A multicolored LED device made of a semipolar material having different indium containing regions provided on different spatial features of GaN material. Other materials such as non-polar materials can also be used.
|
| 申请公布号 |
US2009309110(A1) |
申请公布日期 |
2009.12.17 |
| 申请号 |
US20090484924 |
申请日期 |
2009.06.15 |
| 申请人 |
SORAA, INC. |
发明人 |
RARING JAMES W.;FEEZELL DANIEL F.;NAKAMURA SHUJI |
| 分类号 |
H01L33/00;H01L33/06;H01L33/08;H01L33/16 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
