SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor memory device and a method of fabricating the same are provided to improve over-etching in a chemical mechanical polishing process by forming a polishing stopping layer within a second active region of a peripheral circuit region. CONSTITUTION: In a device, a semiconductor substrate(10) includes a first active region of the memory cell and a second active region of a peripheral circuit region. A plurality of firsts and second element isolation films(21,22) are projected from the surface of the semiconductor substrate. The first active region and the second active region are defined with the first and second element isolation films. At least one polishing stopping layer(23) is formed within the second active region. The polishing stopping layer is projected from the surface of the semiconductor substrate. The second active region including the polishing stopping layer is space for a capacitor.