| 摘要 |
PURPOSE: A fabrication method of a semiconductor device is provided to improve a device characteristics by forming an MFC(Metal Finger Capacitor) with a first wiring structure connected to a bottom electrode and a second wiring structure connected to the top electrode. CONSTITUTION: In a device, 1a and 1b metal line(202a,202b) are formed on a semiconductor substrate(200). A first interlayer insulating film(204), a 1a and 1b contact plugs(206a,206b) are formed on the semiconductor substrate. 2a and 2b metal lines(208a,208b) are formed on the semiconductor substrate. A second interlayer insulating film(210), 2a and 2b contact plugs(212a,212b), 3a and 3b metal lines(214a,214b), a third inter-layer insulating film(216), 3a and 3b contact plugs(218a,218b), and 4a and 4b metal lines(220a,220b) are successively formed on the semiconductor substrate. The fourth interlayer insulating film(222), a bottom electrode(226), and a dielectric film(228) are formed on the semiconductor substrate.
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