| 摘要 |
PURPOSE: A method for fabricating a CMOS image sensor using a dual hard mask film is provided to improve uniformity of threshold linewidth of a photo resist pattern, by using an organic anti-reflection coating. CONSTITUTION: A pixel region and a logic region are defined in a substrate(21). A gate conductive film(22) is formed on the top of the substrate including the pixel region and the logic region. A hard mask pattern is formed on the top of the gate conductive film. The hard mask pattern formed in the pixel region is thicker than the hard mask pattern formed in the logic region. The gate conductive film is etched by using the hard mask pattern as an etching barrier. A gate pattern(23A) is respectively formed in the pixel region and the logic region. The hard mask pattern remaining behind is removed from the logic region. A silicide(29) is formed in the logic region. |
