| 摘要 |
<p>PURPOSE: A method for forming a triple gate of a semiconductor device is provided to improve the characteristics and reliability of the device without damage due to plasma, by forming a trench through a vapor etching process. CONSTITUTION: A buffer layer and a hard mask are formed on a substrate. A hard mask pattern(104A) and a buffer layer pattern(102A) are formed by etching the hard mask and the buffer layer. A first and a second trench(108) are formed within the substrate by performing a vapor etching process using the hard mask pattern as an etch barrier layer. A filling insulation layer is formed to bury the first and the second trench. The hard mask pattern and the buffer layer pattern are removed. A gate insulating layer is formed on the substrate between the first and the second trench. A conductive film is formed to cover the gate insulating layer. A gate electrode is formed by etching the conductive film.</p> |
