| 摘要 |
PURPOSE: A nitride light emitting device having inn quantum dot capping layer is provided to decrease a forward operating voltage by forming a capping layer between a P-type electrode and an Mg -doped P-type semiconductor layer. CONSTITUTION: The emitting device(10) includes the low temperature buffer layer(12), N type nitride semiconductor layer(13), the active layer(15), the P-type nitride semiconductor layer(16) and the P-type transparent electrode successively formed on the substrate(11). A nitride semiconductor includes the Al(x) In(y) Ga(z) N composition. A P-type nitride semiconductor layer is formed with a Mg-doped P-type Al(x) In(y) Ga(z) N. A P-type pad electrode(19) is formed on a P-type electrode. An N-type pad electrode is arranged on the N-type nitride semiconductor layer. |
