| 摘要 |
PURPOSE: A semiconductor laser diode and a fabricating method thereof are provided to enhance an optical output and lengthen a lifetime by forming a window layer on a part of an n-clad layer and a bottom of the n-clad layer. CONSTITUTION: An n-clad layer(21), an active layer(22), and a p-clad layer(23) are formed on an n-GaAs substrate(20). The p-clad layer is etched partially. A projected ridge is formed to the longitudinal direction of the p-clad layer. A current blocking layer(24) is formed on the etched p-clad layer. A p-cap layer(25) is formed on the ridge and the current blocking layer. A first dielectric layer is formed on the p-cap layer. A second dielectric layer is formed on the first dielectric layer. A window layer(28) is formed on the second dielectric layer. A p-pad electrode(29) and an n-pad electrode(30) are formed on the p-cap layer and a bottom of the n-GaAs substrate.
|
