| 摘要 |
A method for manufacturing a semiconductor device is provided to improve integration degree of a semiconductor device by forming an element isolation layer with a nitride silicon. First insulation layer(12A,14A,16A) are formed on a semiconductor substrate(10A) defined as an element isolation region and an active area. A photosensitive pattern exposing an element isolation region on the first insulation layer is formed, and a trench is formed by etching a first insulation layer and a semiconductor substrate with photosensitive pattern as an etch mask. The photosensitive pattern is removed, and a second and a third insulation layers(30,40) are successively formed on the front of the semiconductor substrate including the trench.
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